???????????????????????????????? SSFD3006 main product characteristics: ssf3612d ssf3612d SSFD3006 ssf3612d ssf3612d SSFD3006 v dss 30v r ds (on) 3.8m ? (typ.) i d 90a ? silikron semiconductor co.,ltd. 2011.10.10 version : 1.0 page 1 of 8 www.silikron.com ? to-252 (d-pak) ? schematic diagram ? marking and pin assignment ? features and benefits: ? ? ? ? advanced trench mosfet process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? high power and current handing capability ? 175 operating temperature description: it utilizes the advanced trench processing techniques to achieve extr emely low on resistance and low gate charge. these features combine to ma ke this design an extremely efficient and reliable device for use in pwm, load switching and a wide variet y of other applications. ? absolute max rating: symbol parameter max. units i d @ tc = 25c continuous drain current, vgs @ 10v 90 i d @ tc = 100c continuous drain current, vgs @ 10v 66 i dm pulsed drain current 360 i sm pulsed source current (body diode) 360 a p d @tc = 25c power dissipation 75 w p d @tc =100c power dissipation 78 w v ds drain-source voltage 30 v v gs gate-to-source voltage 20 v dv/dt peak diode recovery voltage 1.5 v/ns e as single pulse avalanche energy @ l=0.1mh 90 mj i as avalanche current @ l=0.1mh 42 a t j t stg operating junction and storage te mperature range -55 to + 175 c
???????????????????????????????? SSFD3006 ? ? silikron semiconductor co.,ltd. 2011.10.10 version : 1.0 page 2 of 8 www.silikron.com ? thermal resistance symbol characterizes typ. max. units r jc junction-to-case ? 2 /w junction-to-ambient ( t 10s) ? 100 /w r ja junction-to-ambient (pcb mounted, steady-state) ? 50 /w electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 ? ? v v gs = 0v, id = 250 a ? 3.8 6 v gs =10v,i d = 15a ? 6.4 ? t j = 125 ? ? 4.9 8.5 v gs =4.5v,i d =11.5a r ds(on) static drain-to-source on-resistance ? ? 7.2 ? m? t j = 125 1 1.5 3 v ds = v gs , i d = 250 a v gs(th) gate threshold voltage ? 1.21 ? v t j = 125 ? ? 1 v ds = 30v,v gs = 0v i dss drain-to-source leakage current ? ? 50 a t j = 125c ? ? ? ? 100 v gs =20v i gss gate-to-source forward leakage -100 ? ? ? na v gs = -20v q g total gate charge ? ? 35 ? q gs gate-to-source charge ? ? 8 ? q gd gate-to-drain("miller") charge ? ? 18 ? nc i d = 32a, v ds =15v, v gs =4.5v t d(on) turn-on delay time ? ? 12 ? t r rise time ? ? 63 ? t d(off) turn-off delay time ? ? 41 ? t f fall time ? ? 11 ? ns v gs =4.5v, vds=15v, r gen =2 ?i d = 32a, c iss input capacitance ? ? 3833 ? c oss output capacitance ? ? 459 ? c rss reverse transfer capacitance ? ? 427 ? pf v gs = 0v v ds = 15v ? = 800khz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s maximum body-diode continuous curren ? ? 90 a v sd diode forward voltage ? 0.72 1.2 v i s =2.8a, v gs =0v t rr reverse recovery time ? 16 ? ns q rr reverse recovery charge ? 8.8 ? nc t j = 25c, i f =30a, di/dt = 150a/ s
???????????????????????????????? SSFD3006 ? test circuits and waveforms ? silikron semiconductor co.,ltd. 2011.10.10 version : 1.0 page 3 of 8 www.silikron.com ? switch waveforms: notes : ? the maximum current rating is limited by bond-wires. repetitive rating; pulse width limit ed by max. junction temperature. the power dissipation pd is based on max. junction temperature, using ju nction-to-case thermal resistance. the value of r ja is measured with the devic e mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedenc e which is measured with the device mounted to a large heatsink, assumi ng a maximum junction temperature of t j(max) =175c.
???????????????????????????????? SSFD3006 ? typical electrical and thermal characteristics vsd source-drain voltage (v) i s - reverse drain current (a) ? id- drain current (a) vgs gate-source voltage (v) id- drain current (a) vgs gate-source voltage (v) ? ? ? ? ? ? ? ? ? ? figure 1: typical transfer characteristics ? figure 6: body-diode characteristics ? ? ? ? vgs gate-source voltage (v) rdson on-resistance (mohm) ? normalized on-resistance t j -junction temperature( ) v gs =10v i d =15a v gs =4.5v i d =11.5a normalized on-resistance t j -junction temperature( ) v gs =10v i d =15a v gs =4.5v i d =11.5a ? ? ? ? ? ? ? ? ? ? ? figure 5: on-resistance vs. gate-source voltage ? figure 4: on-resistance vs. junction temperature ? ? i d - drain current (a) vds drain-source voltage (v) t j =175 t a =25 i d - drain current (a) vds drain-source voltage (v) t j =175 t a =25 figure 5: maximum forward biased safe operating area ? ? silikron semiconductor co.,ltd. 2011.10.10 version : 1.0 page 4 of 8 www.silikron.com ?
???????????????????????????????? SSFD3006 ? typical electrical and thermal characteristics ? ? z thja normalized transient ? ? ? ? ? ? ? ? ? ? figure 6: normalized maximum transient thermal impedance ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? silikron semiconductor co.,ltd. 2011.10.10 version : 1.0 page 5 of 8 www.silikron.com ?
???????????????????????????????? SSFD3006 ? ? ? ? ? ? silikron semiconductor co.,ltd. 2011.10.10 version : 1.0 page 6 of 8 www.silikron.com ?
???????????????????????????????? SSFD3006 ? ordering and marking information ? ? device marking: SSFD3006 package (available) to-252 operating temperature range c : -55 to 175 oc devices per unit option1 package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton box to-252 80 50 4000 10 40000 option2 package type units/ tape tapes/inner box units/inner box inner boxes/carton box units/carton box to-252 2500 2 5000 7 35000 option3 package type units/ tape tapes/inner box units/inner box inner boxes/carton box units/carton box to-252 2500 1 2500 10 25000 ? silikron semiconductor co.,ltd. 2011.10.10 version : 1.0 page 7 of 8 www.silikron.com ?
???????????????????????????????? SSFD3006 ? ? silikron semiconductor co.,ltd. 2011.10.10 version : 1.0 page 8 of 8 www.silikron.com ? attention: any and all silikron products described or contained here in do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reason ably expected to result in serious physical and/or material damage. consult with your silikron representative nearest you bef ore using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures t hat result from using product s at values that exceed, even momentarily, rated values (such as maximum rating s, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contai ned herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functi ons of the described products as mounted in the customer?s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mount ed in the customer?s products or equipment. silikron semiconductor co.,ltd. strives to supply high- quality high-reliability prod ucts. however, any and all semiconductor products fail with some probability. it is possibl e that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt sa fety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant desig n, and structural design. in the event that any or all silik ron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorit ies concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information st orage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellect ual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing e quipment, refer to the "deliv ery specification" for the silikron product that you intend to use. this catalog provides information as of dec, 2008. specifications and information herein are subject to change without notice. customer service worldwide sales and service: sales@silikron.com technical support: technical@silikron.com suzhou silikron semiconductor corp. building ? 11a ? suchun ? industrial ? square, ? 428# ? xinglong ? street, ? suzhou ? p. r . ? china ? tel: (86-512) 62560688 fax: (86-512) 65160705 e-mail: sales@silikron.com
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